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Электронный компонент: 2SC4713K

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2SC4774 / 2SC4713K
Transistors
Rev.A
1/2
High frequency amplifier transistor,
RF switching (6V, 50mA)
2SC4774 / 2SC4713K

Features
1) Very low output-on resistance (Ron).
2) Low capacitance.

Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
12
6
3
50
0.2
150
-
55 to
+
150
Unit
V
V
V
mA
W
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Packaging specifications and h
FE
Type
2SC4774
UMT3
S
BM
T106
3000
2SC4713K
SMT3
S
BM
T146
3000
Denotes h
FE
Package
h
FE
Marking
Code
Basic ordering unit (pieces)






External dimensions (Unit : mm)
2SC4774
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
2SC4713K
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
( 3
)
0.9
0.7
0.2
0.65
( 2
)
2.0
1.3
( 1
)
0.65
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
0.8
0.15
0~0.1
0.3Min.
1.1
( 2
)
( 1
)
2.8
1.6
0.4
( 3
)
2.9
1.9
0.95
0.95

Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
12
6
3
-
-
-
270
300
-
-
-
-
-
-
-
-
800
1
-
-
-
0.5
0.5
0.3
560
-
1.7
V
V
V
A
A
V
-
MHz
pF
I
C
=
10
A
I
C
=
1mA
I
E
=
10
A
V
CB
=
10V
V
EB
=
2V
I
C
/I
B
=
10mA/1mA
V
CE
/I
C
=
5V/5mA
V
CE
=
5V, I
E
= -
10mA, f
=
200MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Ron
-
2
-
I
B
=
3mA, V
I
=
100mVrms, f
=
500kHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance





2SC4774 / 2SC4713K
Transistors
Rev.A
2/2

Electrical characteristic curves
1
0
2
3
4
5
0
10
8
6
4
2
5mA
35mA
30mA
25mA
20mA
15mA
10mA
I
B
=
0
A
Ta
=
25
C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1
Grounded emitter output
characteristics ( )
0.1
0
0.2
0.3
0.4
0.5
0
50
40
30
20
10
0.3mA
0.4mA
0.5mA
1.0mA
0.2mA
0.1mA
I
B
=
0mA
Ta
=
25
C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2
Grounded emitter output
characteristics ( )
0.4
0
0.8
1.2
1.6
2.0
0
50
40
30
20
10
125
C
25
C
-
25
C
V
CE
=
5V
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.3
Grounded emitter propagation
characteristics

50
0.1
20
0.2
10
0.5
5
1
2
20
10
5
50
100
200
500
1000
COLLECTER SATURATION VOLTAGE : V
CE(sat)
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.5
Collector-emitter saturation
voltage vs. collector current
Ta
=
25
C
I
C
/I
B
=
10
50
0.1
20
0.2
10
0.5
5
1
2
50
20
100
200
500
1000
2000
GAIN BANDWIDTH PRODUCT : f
T
(MHz)
COLLECTOR CURRENT : I
C
(mA)
Fig.6
Gain bandwidth product vs.
collector current
Ta
=
25
C
V
CE
=
5V
50
0.1
20
0.2
10
0.5
5
1
2
20
10
50
100
200
500
1000
DC CURRENT TRANSFER RATIO : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4
DC current gain vs. collector current
Ta
=
25
C
V
CE
=
5V

50
0.1
20
0.2
10
0.5
5
1
2
1
2
5
10
20
50
ON RESISTANE : R
on
(
)
BASS CURRENT : I
B
(mA)
Fig.9
Output-on resistance vs.
Ta
=
25
C
f
=
500kHz
i
=
100mVrms
R
L
=
1k
50
0.1
20
0.2
10
0.5
5
1
2
0.5
0.2
1
2
5
10
20
FEEDBACK CAPACITIANCE : C
re
(pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7
Collector output capacitance
Ta
=
25
C
f
=
1MHz
50
0.1
20
0.2
10
0.5
5
1
2
0.5
0.2
1
2
5
10
20
OUTPUT CAPACITANCE : C
ob
(pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.8 Back capacitance voltage
Ta
=
25
C
f
=
1MHz
base current
vs. voltage
Appendix
Appendix1-Rev1.1


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